? semiconductor components industries, llc, 2008 september, 2008 ? rev. 13 1 publication order number: bdv65b/d bdv65b(npn), bdv64b(pnp) complementary silicon plastic power darlingtons . . . for use as output devices in complementary general purpose amplifier applications. ? high dc current gain ? hfe = 1000 (min.) @ 5 adc ? monolithic construction with built ? in base emitter shunt resistors ? pb ? free packages are available* ??????????????????? ??????????????????? maximum ratings ????????????? ????????????? ??? ??? ??? ??? ??? ??? ????????????? ????????????? collector ? emitter voltage ??? ??? ??? ??? ??? ??? ????????????? ????????????? ? base voltage ??? ??? ??? ??? ??? ??? ????????????? ? base voltage ??? ??? ??? ????????????? ????????????? ????????????? ? continuous ? peak ??? ??? ??? ??? ??? ??? ??? ??? ??? ????????????? ????????????? ??? ??? ??? ??? ??? ??? ????????????? ????????????? ????????????? c derate above 25 c ??? ??? ??? ??? ??? ??? ??? ??? ??? c ????????????? ????????????? ??? ??? ??? ??? 65 to + 150 ??? ??? c ??????????????????? ??????????????????? thermal characteristics ????????????? ????????????? ??? ??? ??? ??? ??? ??? ????????????? ????????????? thermal resistance, junction ? to ? case ??? ??? jc ??? ??? ??? ??? c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. sot ? 93 (to ? 218) case 340d 10 ampere darlington complementary silicon power transistors 60 ? 80 ? 100 ? 120 volts, 125 watts marking diagram http://onsemi.com ayww bdv6xbg a = assembly location y = year ww = work week g=pb ? free package bdv6xb = device code x = 4 or 5 device package shipping ordering information bdv65b sot ? 93 30 units / rail bdv65bg sot ? 93 (pb ? free) 30 units / rail bdv64b sot ? 93 30 units / rail BDV64BG sot ? 93 (pb ? free) 30 units / rail collector 2,4 base 1 emitter 3 collector 2 base 1 emitter 3 npn pnp bdv65b bdv64b 3 2 1
bdv65b (npn), bdv64b (pnp) http://onsemi.com 2 1.0 0.8 0 0 25 50 100 125 150 figure 1. power derating t c , case temperature ( c) derating factor 75 0.4 0.6 0.2 ????????????????????????????????? ????????????????????????????????? electrical characteristics ?????????????????????? ?????????????????????? ????? ????? ??? ??? ???? ???? ??? ??? ????????????????????????????????? ????????????????????????????????? ?????????????????????? ?????????????????????? ?????????????????????? collector ? emitter sustaining voltage (1) (i c = 30 madc, i b = 0) ????? ????? ????? ??? ??? ??? ???? ???? ???? ? ??? ??? ??? vdc ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ? ???? ???? ???? 1.0 ??? ??? ??? ?????????????????????? ?????????????????????? ????? ????? ??? ??? ? ???? ???? 0.4 ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? c) ????? ????? ????? ??? ??? ??? ? ???? ???? ???? 2.0 ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ????? ????? ????? ??? ??? ??? ? ???? ???? ???? 5.0 ??? ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics ?????????????????????? ?????????????????????? dc current gain (i c = 5.0 adc, v ce = 4.0 vdc) ????? ????? ??? ??? ???? ???? ? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? collector ? emitter saturation voltage (i c = 5.0 adc, i b = 0.02 adc) ????? ????? ????? ??? ??? ??? ? ???? ???? ???? 2.0 ??? ??? ??? ?????????????????????? ?????????????????????? ?????????????????????? ? emitter saturation voltage (i c = 5.0 adc, v ce = 4.0 vdc) ????? ????? ????? ??? ??? ??? ? ???? ???? ???? 2.5 ??? ??? ???
bdv65b (npn), bdv64b (pnp) http://onsemi.com 3 10k figure 2. dc current gain i c , collector current (a) 0.1 1 1k h fe , dc current gain 4 10 npn pnp v ce = 4 v i c , collector current (a) 0.1 1 h fe , dc current gain 10 figure 3. dc current gain 10k 1k 1 10 0.1 i c , collector current (a) 10 0.1 v be(sat) @ i c /i b = 250 v, voltage (v) figure 4. ?on? voltages 1 1 10 i c , collector current (a) 0.1 v, voltage (v) 1 figure 5. ?on? voltages 0.1 10 1 v be(sat) @ i c /i b = 250 figure 6. active region safe operating area 100 1 v ce , collector-emitter voltage (v) 50 20 5 10 50 100 secondary breakdown limited @ t j 150 c thermal limit @ t c = 25 c bonding wire limit i c , collector current (a) bdv65b, bdv64b dc 5.0 ms 1.0 ms 100 s 10 1 30 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation i .e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 6 is based on t j(pk) = 150 c, t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 7. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
bdv65b (npn), bdv64b (pnp) http://onsemi.com 4 figure 7. thermal response t, time (ms) 1.0 0.01 0.5 0.2 0.1 0.05 0.03 0.01 0.05 0.1 0.5 1.0 5 10 50 100 100 0 z jc(t) = r(t) r jc r jc = 1.0 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 (single pulse) 0.2 0.05 0.1 0.02 0.01 r(t), transient thermal resistance (normalized) 500 package dimensions sot ? 93 (to ? 218) case 340d ? 02 issue e a d v g k s l u b q 123 4 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. e c j h dim min max min max inches millimeters a --- 20.35 --- 0.801 b 14.70 15.20 0.579 0.598 c 4.70 4.90 0.185 0.193 d 1.10 1.30 0.043 0.051 e 1.17 1.37 0.046 0.054 g 5.40 5.55 0.213 0.219 h 2.00 3.00 0.079 0.118 j 0.50 0.78 0.020 0.031 k 31.00 ref 1.220 ref l --- 16.20 --- 0.638 q 4.00 4.10 0.158 0.161 s 17.80 18.20 0.701 0.717 u 4.00 ref 0.157 ref v 1.75 ref 0.069 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 bdv65b/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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